Semiconductor memory device

ABSTRACT

A semiconductor memory device includes first and second memory cell transistors between first and second select transistors, third and fourth memory cell transistors between third and fourth select transistors, a first word line for first and third memory cell transistors, a second word line for second and fourth memory cell transistors, first to fourth selection gate lines respectively for first through fourth select transistors, a bit line, and a source line. During a read operation, while a voltage applied to the second word line is boosted, voltages applied to the first word line and the third and fourth selection gate line are also boosted, after which the voltage applied to the first word line is lowered, and the third and fourth selection gate lines are discharged. After the time the third and fourth selection gate lines are discharged, voltages applied to the bit line and the source line are boosted.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2017-007572, filed Jan. 19, 2017, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice.

BACKGROUND

A NAND-type flash memory is known as a semiconductor memory device.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a semiconductor memory device according toa first embodiment.

FIG. 2 is a circuit diagram of a memory cell array included in thesemiconductor memory device according to the first embodiment.

FIG. 3 is a sectional view of the memory cell array included in thesemiconductor memory device according to the first embodiment.

FIG. 4 is a flowchart illustrating the flow of a read operation in thesemiconductor memory device according to the first embodiment.

FIG. 5 is a timing chart illustrating voltages and currents of variouswiring lines during the read operation in the semiconductor memorydevice according to the first embodiment.

FIG. 6 is a diagram illustrating a channel potential and bands of anon-selected NAND string during the read operation in the semiconductormemory device according to the first embodiment.

FIG. 7 is a diagram illustrating a channel potential and bands of thenon-selected NAND string during the read operation in the semiconductormemory device according to the first embodiment.

FIG. 8 is a diagram illustrating a channel potential and bands of thenon-selected NAND string in a case where voltages of a non-selected wordline and a dummy word line are increased with select transistors turnedoff during the read operation.

FIG. 9 is a timing chart illustrating voltages of various wiring linesduring a read operation in a semiconductor memory device according to asecond embodiment.

DETAILED DESCRIPTION

Embodiments provide a semiconductor memory device capable of improvingprocessing capacity.

In general, according to one embodiment, a semiconductor memory deviceincludes a first memory string including first and second selecttransistors and first and second memory cell transistors connectedbetween the first and second select transistors, a second memory stringincluding third and fourth select transistors and third and fourthmemory cell transistors connected between the third and fourth selecttransistors, a first word line connected to gates of the first and thirdmemory cell transistors, a second word line connected to gates of thesecond and fourth memory cell transistors, first to fourth selectiongate lines respectively connected to gates of the first to fourth selecttransistors, a bit line connected to the first and third selecttransistors, and a source line connected to the second and fourth selecttransistors. During a read operation performed on the first memory celltransistor, the second word line is boosted from a first voltage to asecond voltage at a constant rate over a first time interval starting ata first point in time, and the first and second selection gate lines areboosted from the first voltage to a third voltage, which is lower thanthe second voltage, at a constant rate over a second time interval,which is shorter than the first time interval, starting at the firstpoint in time. In addition, the first word line is boosted from thefirst voltage to a fourth voltage, which is lower than the thirdvoltage, at a constant rate over a third time interval, which is shorterthan the second time interval, starting at the first point in time, andthen a fifth voltage lower than the fourth voltage is applied to thefirst word line. Further, the third and fourth selection gate lines areboosted from the first voltage to the fourth voltage at a constant rateover the third time interval starting at the first point in time, andthen the first voltage is applied to the third and fourth selection gatelines. The bit line and the source line are maintained at a sixthvoltage, which is lower than the fifth voltage, during the third timeinterval, and then, after the end of the third time interval, the bitline and the source line are boosted from the sixth voltage to a seventhvoltage.

Hereinafter, embodiments are described with reference to the drawings.In this description, portions which are used in common are assigned therespective same reference characters in all of the figures.

1. First Embodiment

A semiconductor memory device according to a first embodiment isdescribed. In the following description, a three-dimensionally stackedNAND-type flash memory, in which memory cell transistors arethree-dimensionally stacked in layers on a semiconductor substrate, istaken as an example of the semiconductor memory device.

1.1 Configuration 1.1.1 Overall Configuration of Semiconductor MemoryDevice

First, the entire configuration of the semiconductor memory deviceaccording to the present embodiment is described with reference to FIG.1.

As illustrated in FIG. 1, the NAND-type flash memory 1 includes a memorycell array 2, a row decoder 3, a sense amplifier 4, a source line driver5, a control circuit 6, and a voltage generation circuit 7.

The memory cell array 2 includes a plurality of blocks BLK (BLK0, BLK1,BLK2, . . . ) including non-volatile memory cell transistors associatedwith rows and columns. Each block BLK includes, for example, four stringunits SU (SU0 to SU3). Then, each string unit SU includes a plurality ofNAND strings 8. The number of blocks included in the memory cell array 2and the number of string units included in each block can be any number.Details of the memory cell array 2 are described below.

The row decoder 3 decodes a row address, selects any one of the blocksBLK based on a result of the decoding, and further selects any one ofthe string units SU. Then, the row decoder 3 outputs a required voltageto the selected block BLK. The row address is supplied from, forexample, an external controller (not illustrated) which controls theNAND-type flash memory 1.

The sense amplifier 4 senses data read from the memory cell array 2 atthe time of a read operation. Then, the sense amplifier 4 outputs theread data to the external controller. The sense amplifier 4 writes writedata received from the external controller into the memory cell array 2at the time of a write operation for data.

The source line driver 5 applies required voltages to a source line atthe time of write, read, and erase operations.

The control circuit 6 controls the operation of the entire NAND-typeflash memory 1.

The voltage generation circuit 7 generates voltages required for write,read, and erase operations, and applies the generated voltages to therow decoder 3, the sense amplifier 4, and the source line driver 5. Therow decoder 3, the sense amplifier 4, and the source line driver 5 applyvoltages supplied from the voltage generation circuit 7 to the memorycell transistors.

1.1.2 Configuration of Memory Cell Array

Next, a configuration of the memory cell array 2 is described withreference to FIG. 2. While the example illustrated in FIG. 2 indicatesthe block BLK0, the other blocks BLK have the same configuration.

As illustrated in FIG. 2, the block BLK0 includes, for example, fourstring units SU. Then, each string unit SU includes a plurality of NANDstrings 8. Each NAND string 8 includes, for example, eight memory celltransistors MT0 to MT7, two dummy memory cell transistors MTDD and MTDS,and two select transistors ST1 and ST2. Hereinafter, in a case where nospecific distinction is required, each of the memory cell transistorsMT0 to MT7 is referred to as a “memory cell transistor MT”. Moreover, ina case where no specific distinction is required, each of the dummymemory cell transistors MTDD and MTDS is referred to as a “dummy memorycell transistor MID”. Each of the memory cell transistor MT and thedummy memory cell transistor MTD includes a control gate and a chargestorage layer, and stores data in a non-volatile manner.

Furthermore, each of the memory cell transistor MT and the dummy memorycell transistor MTD can be of the MONOS type, in which an insulatingfilm is used as the charge storage layer, or can be of the FG type, inwhich a conductive layer is used as the charge storage layer.Hereinafter, in the description of the present embodiment, the MONOStype is taken as an example. The number of memory cell transistors MT isnot limited to 8, but can be, for example, 16, 32, 64, 128, or any othernumber. Moreover, the number of dummy memory cell transistors MTD can beany number; in fact, the dummy memory cell transistor MTD can beomitted. Furthermore, the number of select transistors ST1 and ST2 canbe any natural number, i.e., one or more

Then, the memory cell transistors MT and the dummy memory celltransistors MTD are connected in series between the source of the selecttransistor ST1 and the drain of the select transistor ST2. Morespecifically, the dummy memory cell transistor MTDS, the memory celltransistors MT0 to MT7, and the dummy memory cell transistor MTDD areconnected in series in their current pathway. Then, the drain of thedummy memory cell transistor MTDD is connected to the source of theselect transistor ST1, and the source of the dummy memory celltransistor MTDS is connected to the drain of the select transistor ST2.

The gates of the select transistors ST1 in the respective string unitsSU0 to SU3 are respectively connected to selection gate lines SGD0 toSGD3. Similarly, the gates of the select transistors ST2 in therespective string units SU0 to SU3 are respectively connected toselection gate lines SGS0 to SGS3. In one embodiment, the gates of theselect transistors ST2 in the respective string units SU0 to SU3 share acommon wiring layer, e.g., wiring layer 14 shown in FIG. 3. Hereinafter,in a case where no specific distinction is required, each of theselection gate lines SGD0 to SGD3 is referred to as a “selection gateline SGD”. In a case where no specific distinction is required, each ofthe selection gate lines SGS0 to SGS3 is referred to as a “selectiongate line SGS”. Additionally, in a case where no specific distinction isrequired, each of the selection gate lines SGD and SGS is referred to asa “selection gate line SG”. Furthermore, the selection gate lines SGS0to SGS3 of the respective string units SU can be connected in common.

The control gates of the memory cell transistors MT0 to MT7 included ineach block BLK are respectively connected to word lines WL0 to WL7 incommon. Similarly, the control gates of the dummy memory celltransistors MTDD and MTDS included in each clock BLK are respectivelyconnected to dummy word lines WLDD and WLDS in common. Hereinafter, in acase where no specific distinction is required, each of the word linesWL0 to WL7 is referred to as a “word line WL. Moreover, in a case whereno specific distinction is required, each of the dummy word lines WLDDand WLDS is referred to as a “dummy word line WLD”.

The drains of the select transistors ST1 of the respective NAND strings8 included in the string unit SU are respectively connected to differentbit lines BL0 to BL(L−1) (L being a natural number of 2 or more).Hereinafter, in a case where no specific distinction is required, eachof the bit lines BL0 to BL(L−1) is referred to as a “bit line BL”.Moreover, each bit line BL connects one NAND string 8 included in eachstring unit SU across a plurality of blocks BLK in common. Furthermore,the sources of a plurality of select transistors ST2 are connected to asource line SL in common.

In other words, the string unit SU is an aggregation of NAND strings 8which are connected to respective different bit lines BL and areconnected to the same selection gate line SGD. Moreover, the block BLKis an aggregation of a plurality of string units SU respectivelyconnected to the word lines WL in common. Then, the memory cell array 2is an aggregation of a plurality of blocks BLK respectively connected tothe bit lines BL in common.

Erasing data can be performed in units of a block BLK or in units of aportion smaller than the block BLK. A method for erasing is describedin, for example, U.S. patent application Ser. No. 13/235,389 filed Sep.18, 2011, entitled “NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,” U.S.patent application Ser. No. 12/694,690 filed Jan. 27, 2010, entitled“NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE,” and U.S. patent applicationSer. No. 13/483,610 filed May 30, 2012, entitled “NONVOLATILESEMICONDUCTOR MEMORY DEVICE AND DATA ERASE METHOD THEREOF.” The entirecontents of these patent applications are incorporated in the presentspecification by reference.

Furthermore, the memory cell array 2 can have a different configuration,e.g., as described in U.S. patent application Ser. No. 12/407,403 filedMar. 19, 2009, entitled “THREE DIMENSIONAL STACKED NONVOLATILESEMICONDUCTOR MEMORY,” U.S. patent application Ser. No. 12/406,524 filedMar. 18, 2009, entitled “THREE DIMENSIONAL STACKED NONVOLATILESEMICONDUCTOR MEMORY,” U.S. patent application Ser. No. 12/679,991 filedMar. 25, 2010, entitled “NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE ANDMETHOD OF MANUFACTURING THE SAME,” and U.S. patent application Ser. No.12/532,030 filed Mar. 23, 2009, entitled “SEMICONDUCTOR MEMORY ANDMETHOD FOR MANUFACTURING SAME.” The entire contents of these patentapplications are incorporated in the present specification by reference.

1.1.3 Cross-Section Configuration of Memory Cell Array

Next, a cross-section configuration of the memory cell array 2 isdescribed with reference to FIG. 3. The example illustrated in FIG. 3indicates the cross-section of the string units SU0 and SU1, and thesame also applies to the configuration of the string units SU2 and SU3.Furthermore, in FIG. 3, an interlayer insulating film is omitted fromillustration.

As illustrated in FIG. 3, a plurality of source line contacts LI isprovided along a first direction D1 parallel to the semiconductorsubstrate 10, and one string unit SU is located between two source linecontacts LI. The source line contact LI connects the semiconductorsubstrate 10 and the source line SL (not illustrated), which is providedhigher than the NAND string 8. Furthermore, the locations of the sourceline contact LI and the NAND string 8 may be set differently. Forexample, a plurality of NAND strings 8 can be provided between twosource line contacts LI. Moreover, while, in the example illustrated inFIG. 3, for ease of description, a case in which, in one string unit SU,a plurality of NAND strings 8 is arrayed in line along a seconddirection D2 perpendicular to the first direction D1 and parallel to thesemiconductor substrate 10 is illustrated, the location of NAND strings8 in one string unit SU may be set differently. For example, NANDstrings 8 can be arranged in two parallel rows along the seconddirection D2, or can be arranged in four rows in a staggered manner.

In each string unit SU, the NAND string 8 is formed along a thirddirection D3 perpendicular to the semiconductor substrate 10. Morespecifically, an n-type well 11 is provided on the surface region of thesemiconductor substrate 10. Then, a p-type well 12 is provided on thesurface region of the n-type well 11. Moreover, n⁺-type diffusion layers13 are provided on the surface region of the p-type well 12. Then, abovethe p-type well 12, a wiring layer 14, which serves as the selectiongate line SGS, ten wiring layers 15, which serve as the dummy word linesWLD and word lines WL, and a wiring layer 16, which serves as theselection gate line SGD, are sequentially stacked in layers viarespective interlayer insulating films (not illustrated).

Then, a pillar-shaped semiconductor layer 17, which penetrates throughthe wiring layers 16, 15, and 14 and extends to the p-type well 12, isformed. A tunnel insulating film 18, a charge storage layer 19, and ablock insulating film 20 are sequentially formed on the side surface ofthe semiconductor layer 17. The semiconductor layer 17 is made from, forexample, polysilicon. The tunnel insulating film 18 and the blockinsulating film 20 are made from, for example, a silicon oxide film. Thecharge storage layer 19 is made from, for example, a silicon nitridefilm. Hereinafter, a pillar formed by the semiconductor layer 17, thetunnel insulating film 18, the charge storage layer 19, and the blockinsulating film 20 is referred to as a “memory pillar MP”. Thesemiconductor layer 17 functions as a current pathway of the NAND string8, and serves as a region in which channels of respective transistorsare formed. Then, the upper end of the semiconductor layer 17 isconnected to a wiring layer (not illustrated) serving as the bit lineBL.

The memory cell transistors MT and the dummy memory cell transistors MTDare formed from the memory pillar MP and the wiring layers 15. Moreover,the select transistor ST1 is formed from the memory pillar MP and thewiring layer 16, and the select transistor ST2 is formed from the memorypillar MP and the wiring layer 14. Furthermore, in the exampleillustrated in FIG. 3, each of the wiring layer 14 and the wiring layer16 is configured with a single layer, but can be configured with aplurality of layers.

The source line contact LI extends in the second direction D2. Thesource line contact LI is made from, for example, polysilicon. Then, thebottom surface of the source line contact LI is connected to the n⁺-typediffusion layer 13, and the upper surface thereof is connected to awiring layer (not illustrated) serving as the source line SL.

1.2 Read Operation 1.2.1 Overall Flow of Read Operation

First, the overall flow of the read operation is described withreference to FIG. 4. Hereinafter, in the present embodiment, for ease ofdescription, a case in which data corresponding to one threshold voltagelevel is read out by a single read operation is described. Furthermore,in a case where the memory cell transistor MT retains multiple-valued(2-bit or more) data, data corresponding to a plurality of thresholdvoltage levels can be read out by a single read operation.

As illustrated in FIG. 4, in step S1, the NAND-type flash memory 1receives a read command and address information from an externalcontroller (not illustrated). The control circuit 6 starts readingcorresponding pages based on the command and the address information.

First, in step S2, the row decoder 3 starts applying voltages (boosting)to the word lines WL, the dummy word lines WLD, and the selection gatelines SG (SGD and SGS) in a corresponding block BLK. More specifically,the row decoder 3 raises the voltages of a non-selected word line WL andthe dummy word line WLD to a voltage VREAD, and raises the voltage of aselection gate line SG corresponding to a selected string unit SU(hereinafter referred to as a “selection gate line SG_SEL”) to a voltageVSG. Moreover, the row decoder 3 raises the voltages of a selected wordline WL and a selection gate line SG corresponding to a non-selectedstring unit SU (hereinafter referred to as a “selection gate lineSG_USEL”) to a voltage V1.

The voltage VREAD is a voltage which is applied to the non-selected wordline WL and the dummy word line WLD during a data read operation to turnon the corresponding memory cell transistor MT and dummy memory celltransistor MTD. The voltage VSG is a voltage which is applied to theselection gate line SG during a data read operation to turn on thecorresponding select transistors ST1 and ST2.

The voltage V1 is a voltage lower than the voltage VREAD and the voltageVSG. Although details are described below, when a potential differencebetween the voltage VREAD and the voltage V1 becomes large, a differencein band potential becomes large between the transistors (the memory celltransistors MT, the dummy memory cell transistors MTD and the selecttransistors ST1 and ST2) included in the NAND string 8, so that aband-to-band tunneling current is generated (or increased). Therefore,the voltage V1 is set in such a way as to satisfy a relationship of“(VREAD−V1)<V_btbt”, where V_btbt is the minimum potential differenceaccording to which a band-to-band tunneling current is generated(increased) between adjacent transistors.

Furthermore, the potential difference V_btbt varies with, for example,structures of the transistors and locations of the adjacent transistors.When a band-to-band tunneling current is generated, a hot carrieroccurs, so that electric charges are injected into a charge storagelayer. Therefore, the threshold voltage of the memory cell transistor MTvaries, and fail bits of the read operation increase. Accordingly, thepotential difference V_btbt can be set as the minimum potentialdifference according to which fail bits increase depending on apotential difference of “VREAD−V1”.

The sense amplifier 4 and the source line driver 5 apply a groundvoltage VSS (for example, 0 V) to the bit line BL and the source lineSL. In the following description, the present embodiment is describedwith respect to a case where the ground voltage VSS is 0 V. For thatreason, when the voltages of the word line WL, the dummy word line WLD,and the selection gate line SG increase to voltages equal to or higherthan the threshold voltages of the memory cell transistor MT, the dummymemory cell transistor MTD, and the select transistors ST1 and ST2, thememory cell transistor MT, the dummy memory cell transistor MTD, and theselect transistors ST1 and ST2 are turned on. Accordingly, the potentialof the channel of the memory pillar MP is set to 0 V, which is the samevoltage as those of the bit line BL and the source line SL.

Next, in step S3, when the voltages of the selection gate line SG_USELand the selected word line WL reach the voltage V1, the row decoder 3applies 0 V to the selection gate line SG_USEL and applies a voltage V2lower than the voltage V1 to the selected word line WL. The voltage V2is a voltage which is set to decrease the voltage of the selected wordline WL. For example, the voltage V2 can be a voltage which is used toturn off a corresponding memory cell transistor MT, or can be a voltageVCGRV which is applied to the selected word line WL in a next step. Inthe following description, the present embodiment is described withrespect to a case where the memory cell transistor MT is turned off bythe voltage V2 being applied. This causes the selected memory celltransistor MT and the select transistors ST1 and ST2 of the non-selectedstring unit SU to be turned off.

Next, in step S4, a voltage VSL is applied to the bit line BL and thesource line SL. The voltage VSL is a voltage which is applied to thesource line SL during a data read operation.

Next, in step S5, after the voltages of the non-selected word line WLand the dummy word line WLD reach the voltage VREAD, the row decoder 3applies a voltage VCGRV to the selected word line WL. The voltage VCGRVis a voltage corresponding to a threshold voltage level of data targetedfor reading. The voltage VCGRV and the voltage VREAD are in arelationship of “VCGRV<VREAD”. For example, in a case where thethreshold voltage of the memory cell transistor MT is equal to or higherthan the voltage VCGRV, the memory cell transistor MT is turned off,and, in a case where the threshold voltage is lower than the voltageVCGRV, the memory cell transistor MT is turned on.

Next, in step S6, the sense amplifier 4 senses a current flowing throughthe bit line BL connected to the selected memory cell transistor MT,thus reading out data. More specifically, the sense amplifier 4 appliesa voltage VBL to the bit line BL. The voltage VBL is a voltage higherthan the voltage VSL. In a case where a memory cell transistor MTtargeted for reading is in an off-state, no current flows from the bitline BL to the source line SL. On the other hand, a memory celltransistor MT targeted for reading is in an on-state, a current flowsfrom bit line BL to the source line SL.

1.2.2 Voltages and Currents of Various Lines During Read Operation

Next, voltages and currents of various lines during a read operation aredescribed with reference to FIG. 5.

First, voltages of various lines are described.

As illustrated in FIG. 5, at time t1, the row decoder 3 starts applyingvoltages to the word line WL, the dummy word line WLD, and the selectiongate line SG included in the selected block BLK. More specifically, thevoltages of the non-selected word line WL and the dummy word line WLDare increased for a period from time t1 to time t4, and then reach thevoltage VREAD at time t4 (hereinafter referred to as a “VREAD boostingperiod”). The voltages of the selected word line WL and the selectiongate line SG_USEL are increased for a period from time t1 to time t3,and then reach the voltage V1 at time t3 (hereinafter referred to as a“V1 boosting period”). Moreover, the voltage of the selection gate lineSG_SEL reaches the voltage VSG in a period from time t3 to time t4.Moreover, the sense amplifier 4 and the source line driver 5 apply 0 Vto the bit line BL and the source line SL. Furthermore, the voltages ofthe bit line BL and the source line SL are not limited to 0 V (groundvoltage). For example, the voltages of the bit line BL and the sourceline SL only need to be a voltage lower than the voltage VSL. Settingthe voltages of the bit line BL and the source line SL lower than thevoltage VSL enables setting the potential of the channel of the memorypillar MP in the V1 boosting period lower than the voltage VSL.Moreover, while the example illustrated in FIG. 5 indicates a case wherethe boosting rates for the voltages VREAD, VSG, and V1 are the same, theboosting rates for those voltages can be different. In order to preventa processing time of the read operation from becoming long, it isdesirable that the V1 boosting period end within the VREAD boostingperiod.

At time t2, the voltages of the word line WL, the dummy word line WLD,and the selection gate line SG become higher than the threshold voltagesof the memory cell transistor MT, the dummy memory cell transistor MTD,and the select transistors ST1 and ST2, so that the memory celltransistor MT, the dummy memory cell transistor MTD, and the selecttransistors ST1 and ST2 are turned on. With this, the potential of thechannel of the memory pillar MP is set to 0 V, which is the same as thevoltages of the bit line BL and the source line SL.

At time t3, when the voltages of the selected word line WL and theselection gate line SG_USEL reach the voltage V1, the row decoder 3applies the voltage V2 to the selected word line WL, and applies 0 V tothe selection gate line SG_USEL. With this, the voltages of the selectedword line WL and the selection gate line SG_USEL decrease. In thenon-selected string unit SU, the select transistors ST1 and ST2 areturned off. Therefore, the channel of a NAND string 8 in thenon-selected string unit SU (hereinafter referred to as a “non-selectedNAND string”) enters a floating state.

On the other hand, the select transistors ST1 and ST2 in the selectedstring unit SU are kept in an on-state. Then, as the voltage VSL isapplied to the bit line BL and the source line SL, the channel of a NANDstring 8 in the selected string unit SU (hereinafter referred to as a“selected NAND string”) increases to the voltage VSL, which is the samevoltage as those of the bit line BL and the source line SL.

Furthermore, it is desirable that the timing at which the voltage VSL isapplied to the bit line BL and the source line SL be after the selecttransistors ST1 and ST2 in the non-selected string unit SU are turnedoff. This enables preventing the channel potential of the non-selectedNAND string 8 from increasing due to the voltage VSL of the bit line BLand the source line SL. Moreover, it is desirable that the voltage VSLbe smaller than a voltage difference of “VREAD−V1” so as to reduce thevariation (potential difference) of the channel potential occurring inthe neighborhood of the select transistors ST1 and ST2.

At time t4, when the voltages of the non-selected word line WL and thedummy word line WLD reach the voltage VREAD, the row decoder 3 appliesthe voltage VCGRV to the selected word line WL. Furthermore, the rowdecoder 3 can apply the voltage VCGRV to the selected word line WL attime t3.

At time t5, the sense amplifier 4 applies the voltage VBL to the bitline BL, and performs sensing for a period from time t5 to time t6.

At time t6, when sensing ends, recovery processing is performed, so that0 V is applied to the various lines. With this, the read operation ends.

Next, an example of currents flowing through the word line WL and thesource line SL is described. In the present embodiment, since the timingat which to charge the word line WL is different from the timing atwhich to charge the source line SL, the peaks of consumption currents ofthe word line WL and the source line SL are different in timing.

As illustrated in FIG. 5, when the total current flowing through theword line WL and the dummy word line WLD is denoted by IWL, the currentIWL becomes peak (maximum) in a period from time t2 to time t3. Morespecifically, in a period from time t1 to time t2, in the NAND string 8of each string unit SU, the select transistors ST1 and ST2 may be in anoff-state. In this case, the NAND string 8 is in a floating state.Therefore, when the word line WL and the dummy word line WLD arecharged, the current IWL is almost not affected by the parasiticcapacitance existing with respect to the channel of the memory celltransistor MT. In other words, since the charging capacities of the wordline WL and the dummy word line WLD are small, the current IWL isrelatively small.

In a period from time t2 to time t3, each transistor in the selected andnon-selected string units SU is in an on-state, and the channel of theNAND string 8 is in a conducting state. Therefore, the chargingcapacities of the word line WL and the dummy word line WLD are madelarge by being affected by the parasitic capacitance existing withrespect to the channel of the memory cell transistor MT, so that thecurrent IWL increases.

In a period from time t3 to time t4, since the NAND string 8 in thenon-selected string unit SU is brought into a floating state, thecharging capacity decreases, so that the current IWL decreases.

In a period from time t4 to time t5, while the current IWL increases dueto charging of the voltage VCGRV to the selected word line WL, the peakthereof is smaller than that in the period from time t2 to time t3.

On the other hand, a current ISL which flows through the source line SLbecomes peak in a period from time t3, which is the time at which tostart charging the source line SL, to time t4.

1.2.3 Channel Potential of Non-Selected NAND String and State of EachTransistor During Read Operation

Next, the channel potential of the non-selected NAND string 8 and thestate of each transistor during a read operation are described withreference to FIGS. 6 and 7. FIGS. 6 and 7 illustrate the channelpotential and bands (in particular, energy bands) of the non-selectedNAND string 8 at time t3 and time t4, respectively, illustrated in FIG.5. Furthermore, the examples illustrated in FIGS. 6 and 7 indicate acase where the memory cell transistor MT3 is selected in the selectedstring unit SU. In other words, the word line WL3 is selected, and theword lines WL0 to WL2 and WL4 to WL7 are not selected. Furthermore, forease of description, in FIG. 7, the voltage V2 is set to 0 V.

As illustrated in FIG. 6, the voltage V1 is applied to the gate of eachtransistor in the non-selected NAND string 8, and 0 V is applied to thesource line SL and the bit line BL. In this case, each transistor in thenon-selected NAND string 8 is turned on, and the channel potential isset to 0 V irrespective of positions in the memory pillar MP. In thiscase, the potentials of the conduction band Ec and the valence band Evof each transistor are almost the same.

As illustrated in FIG. 7, 0 V is applied to the selection gate line SGin the non-selected NAND string 8, so that the select transistors ST1and ST2 are turned off. Since the select transistors ST1 and ST2 are inan off-state, the non-selected NAND string 8 is brought into a floatingstate. In this state, the voltage VSL is applied to the bit line BL andthe source line SL. Moreover, the voltages of the non-selected wordlines WL (WL0 to WL2 and WL4 to WL7) and the dummy word lines WLD (WLDDand WLDS) increase from the voltage V1 to the voltage VREAD, and 0 V isapplied to the selected word line WL. Then, immediately below thenon-selected memory cell transistors MT (MT0 to MT2 and MT4 to MT7) andthe dummy memory cell transistors MTD (MTDD and MTDS), the channelpotential rises as much as a voltage difference of “VREAD−V1” due tocapacitive coupling. Moreover, according to the rise of the channelpotential, the potentials of the conduction band Ec and the valence bandEv decrease. Therefore, the bands fluctuate between the non-selectedmemory cell transistors MT2 and MT4, which are adjacent to the selectedmemory cell transistor MT3, between the select transistor ST1 and thedummy memory cell transistor MTDD, and between the select transistor ST2and the dummy memory cell transistor MTDS. However, since therelationship of “(VREAD−V1)<V_btbt” is satisfied, almost no band-to-bandtunneling current flows.

1.3 Advantageous Effects According to Present Embodiment

The configuration according to the present embodiment enables improvingprocessing capacity. Hereinafter, advantageous effects according to thepresent embodiment are described in detail.

It is known that when the voltages of the non-selected word line WL andthe dummy word line WLD are increased to the voltage VREAD with theselect transistors ST1 and ST2 of the non-selected NAND string 8 turnedoff during a read operation, the channel potential difference in thenon-selected NAND string 8 becomes large due to capacitive coupling. Inthis case, a band-to-band tunneling current becomes likely to occurbetween adjacent transistors having a large channel potentialdifference.

Such an example is illustrated in FIG. 8. FIG. 8 illustrates the channelpotential and bands of the non-selected NAND string 8 in a case wherethe voltages of the non-selected word line WL and the dummy word lineWLD are increased from 0 V to the voltage VREAD with 0 V applied to theselection gate line SG and the selected word line WL and the voltage VSLapplied to the bit line BL and the source line SL. The exampleillustrated in FIG. 8, as in FIGS. 6 and 7, indicates a case where thememory cell transistor MT3, i.e., the word line WL3, is selected in theselected string unit SU.

As illustrated in FIG. 8, immediately below the non-selected memory celltransistors MT (MT0 to MT2 and MT4 to MT7) and the dummy memory celltransistors MTD (MTDD and MTDS), the channel potential rises to thevoltage VREAD due to capacitive coupling. Moreover, according to therise of the channel potential, the potentials of the conduction band Ecand the valence band Ev decrease. Therefore, the bands fluctuate betweenthe non-selected memory cell transistors MT2 and MT4, which are adjacentto the selected memory cell transistor MT3, between the selecttransistor ST1 and the dummy memory cell transistor MTDD, and betweenthe select transistor ST2 and the dummy memory cell transistor MTDS, sothat a band-to-band tunneling current becomes likely to flow. With this,the threshold voltages of the memory cell transistors MT2 and MT4 andthe dummy memory cell transistors MTDD and MTDS vary, and fail bitsincrease.

A method called “VREAD spike” is known as one of methods for preventinga band-to-band tunneling current. In VREAD spike, after the voltages ofthe word line WL and the dummy word line WLD are increased to thevoltage VREAD with the channel of the non-selected NAND string 8 in aconducting state, the select transistors ST1 and ST2 in the non-selectedNAND string 8 are turned off.

More specifically, for example, the voltages of the word line WL and thedummy word line WLD in the selected block BLK are increased to thevoltage VREAD with the voltage VSL applied to the bit line BL and thesource line SL, and the voltage of the selection gate line SG isincreased to the voltage VSG. With this, the memory cell transistor MT,the dummy memory cell transistor MTD, and the select transistors ST1 andST2 in the selected block BLK are turned on, so that the channelpotential of the NAND string 8 in the selected block BLK homogeneouslyrises to the voltage VSL. Then, after the voltages of the word line WLand the dummy word line WLD reach the voltage VREAD, a voltage thatturns off the select transistors ST1 and ST2, e.g., 0 V, is applied tothe selection gate line SG_USEL, and the select transistors ST1 and ST2in the non-selected NAND string 8 are turned off. Moreover, the voltageVCGRV is applied to the selected word line WL.

This enables preventing an increase of the channel potential of thenon-selected NAND string 8 and a variation of the channel potential inthe NAND string 8. However, in this case, in the non-selected NANDstring 8, after the channel is charged to the voltage VSL, 0 V isapplied to the selection gate line SG_USEL. Therefore, the channelpotential immediately below the select transistors ST1 and ST2 becomes avalue determined by a voltage transition of the voltage VSL and thevoltage VSG, so that a variation caused by the voltage VSL occurs in thechannel potential. Accordingly, the voltage VSL is required to be set tosuch a voltage as not to cause a band-to-band tunnel current.

Moreover, in a case where 0 V is applied to the selection gate lineSG_USEL before the voltages of the non-selected word line WL and thedummy word line WLD reach the voltage VREAD, when a voltage that isfirst applied to the selection gate line SG_USEL is denoted by VX, it isnecessary to satisfy a condition of “V_btbt>(VREAD−(VX−VSL))” withrespect to a potential difference V_btbt which causes a band-to-bandtunnel current. In other words, due to a channel potential differencewhich depends on the voltage VSL, it is impossible to set the voltage VXsufficiently lower than the voltage VREAD.

Furthermore, in a case where, after all of the word lines WL are oncecharged up to the voltage VREAD, 0 V is applied to the selection gateline SG_USEL and the voltage VCGRV is applied to the selected word lineWL, the processing time of a read operation becomes long. Moreover,since the word lines WL are charged with each transistor of the selectedand non-selected NAND strings 8 turned on, the charging capacity becomeslarge. Therefore, current consumption (and power consumption) increases,and the charging time tends to become long.

In contrast to this, in the configuration according to the presentembodiment, charging of the word line WL, the dummy word line WLD, andthe selection gate line SG in the selected block BLK is started with 0 V(ground voltage VSS) applied to the bit line BL and the source line SLin the read operation. Then, when the voltages of the selection gateline SG_USEL and the selected word line WL reach the voltage V1 beforethe voltages of the non-selected word line WL and the dummy word lineWLD reach the voltage VREAD (within the VREAD boosting period), thevoltages of the selection gate line SG_USEL and the selected word lineWL are decreased. Moreover, after the voltage of the selection gate lineSG_USEL decreases and the select transistors ST1 and ST2 of thenon-selected NAND string 8 are turned off, the voltage VSL is applied tothe source line SL and the bit line BL. Therefore, since the selecttransistors ST1 and ST2 of the non-selected NAND string 8 can be turnedoff within the VREAD boosting period, a delay in the processing time,which would be caused by the voltages of the selection gate line SG_USELand the selected word line WL being increased to the voltage V1, can beprevented. Accordingly, the processing capacity of a semiconductormemory device can be improved.

Furthermore, in the configuration according to the present embodiment,an increase in the band-to-band tunnel current caused by the channelpotential difference in the non-selected NAND string 8 can be prevented.Accordingly, an increase in fail bits can be prevented, and thereliability of a semiconductor memory device can be improved.

Moreover, in the configuration according to the present embodiment,during a period in which the voltages of the selection gate line SG_USELand the selected word line WL are being increased to the voltage V1, thevoltages of the bit line BL and the source line SL are set to, forexample, 0 V. Alternatively, the voltages of the bit line BL and thesource line SL can be set to a voltage lower than the voltage VSL. Then,after the select transistors ST1 and ST2 of the non-selected NAND string8 are turned off, the voltage VSL is applied to the bit line BL and thesource line SL. This enables preventing the channel of the non-selectedNAND string 8 from being charged with the voltage VSL. Accordingly,since the voltage VSL is not included in the voltage difference of“VREAD−V1”, the voltage V1 can be set to a lower voltage. In otherwords, the time in which the voltages of the selection gate line SG_USELand the selected word line WL reach the voltage V1 can be made shorter.Accordingly, the processing capacity of a semiconductor memory devicecan be improved.

Additionally, in the configuration according to the present embodiment,since the timing at which to start charging of the word line WL and thedummy word line WLD and the timing at which to start charging of thesource line SL and the bit line BL are different from each other, peaksof currents supplied to the memory cell array are dispersed, so that themaximum level of current consumption can be reduced.

Furthermore, in the configuration according to the present embodiment,since the select transistors ST1 and ST2 of the non-selected NAND string8 are turned off before the voltages of the non-selected word line WLand the dummy word line WLD reach the voltage VREAD, the influence ofthe parasitic capacitances of the memory cell transistor MT and thedummy memory cell transistor MTD in the non-selected NAND string 8 canbe reduced. Accordingly, the charging capacity occurring when thenon-selected word line WL and the dummy word line WLD are charged can bereduced, and an increase in power consumption can be prevented.

2. Second Embodiment

Next, a second embodiment is described. In the second embodiment, a casewhere the voltage VREAD, which is applied to the non-selected word lineWL and the dummy word line WLD during a read operation, is increased intwo steps is described. Hereinafter, only portions different from thoseof the first embodiment are described.

2.1 Voltages of Various Lines During Read Operation

Voltages of various lines during a read operation are described withreference to FIG. 9. In the example illustrated in FIG. 9, the currentsIWL and ISL illustrated in FIG. 5 in the first embodiment are omittedfrom illustration.

As illustrated in FIG. 9, in a period from time t1 to time t6, thevoltages of the bit line BL, the source line SL, the selected word lineWL, and the selection gate lines SG_SEL and SG_USEL are the same asthose illustrated in FIG. 5 in the first embodiment. Hereinafter, onlythe voltages of the non-selected word line WL and the dummy word lineWLD are described.

The voltages of the non-selected word line WL and the dummy word lineWLD are increased for a period from time t1 to time t4, and then reach avoltage VREAD1 at time t4. The voltage VREAD1 is a voltage which isapplied to the non-selected word line WL and the dummy word line WLD fora period other than the sense period (a period from time t5 to time t6)and is used to turn on the corresponding memory cell transistor MT andthe dummy memory cell transistor MTD.

At time t5, the row decoder 3 applies a voltage VREAD2 to thenon-selected word line WL and the dummy word line WLD. The voltageVREAD2 is a voltage which is applied to the non-selected word line WLand the dummy word line WLD for the sense period, and is in arelationship of “VREAD1<VREAD2”. The voltage VREAD in the firstembodiment corresponds to the voltage VREAD2 in the present embodiment.

2.2 Advantageous Effects of Present Embodiment

In the configuration according to the present embodiment, similaradvantageous effects to those of the first embodiment can be obtained.

Furthermore, in the configuration according to the present embodiment,in a period other than the sense period, the voltage VREAD1, which islower than the voltage VREAD2 required for the sense period, is appliedto the non-selected word line WL and the dummy word line WLD. Thisenables shortening the boosting period (a period from time t1 to t4 inFIG. 9) of the non-selected word line WL and the dummy word line WLD.Accordingly, the processing capacity of a semiconductor memory devicecan be improved.

Moreover, in the configuration according to the present embodiment,applying the voltage VREAD1 to the non-selected word line WL and thedummy word line WLD for a period other than the sense time enablesreducing power consumption.

3. Modification Example

A semiconductor memory device according to the above-describedembodiment includes a first memory string including first and secondselect transistors and first and second memory cell transistorsconnected between the first and second select transistors, a secondmemory string including third and fourth select transistors and thirdand fourth memory cell transistors connected between the third andfourth select transistors, a first word line connected to gates of thefirst and third memory cell transistors, a second word line connected togates of the second and fourth memory cell transistors, first to fourthselection gate lines respectively connected to gates of the first tofourth select transistors, a bit line connected to the first and thirdselect transistors, and a source line connected to the second and fourthselect transistors. In a case where data stored in the first memory celltransistor is read out, during a period (from time t1 to time t4 in FIG.5) in which the second word line (non-selected word line WL) is boostedfrom a first voltage (0 V) to a second voltage (VREAD), the first andsecond selection gate lines (SG_SEL) are boosted from the first voltage(0 V) to a third voltage (VSG), after the first word line (selected wordline WL) is boosted from the first voltage to a fourth voltage (V1)lower than the second and third voltages, a fifth voltage lower than thefourth voltage is applied to the first word line, after the third andfourth selection gate lines (SG_USEL) are boosted from the first voltageto the fourth voltage, the first voltage is applied to the third andfourth selection gate lines, a sixth voltage (0 V) is applied to the bitline and the source line during a period in which the first word lineand the third and fourth selection gate lines are boosted to the fourthvoltage, and, after the first word line and the third and fourthselection gate lines are boosted to the fourth voltage, the bit line andthe source line are boosted from the sixth voltage to a seventh voltage(VSL).

Applying the above-described embodiment enables providing asemiconductor memory device capable of improving processing capacity.

Furthermore, embodiments are not limited to the above-describedembodiment, but various modification can be implemented.

For example, the above-described embodiment is applicable to a planarNAND-type flash memory in which memory cell transistors MT aretwo-dimensionally arranged on a semiconductor substrate.

Furthermore, the term “connection” in the above-described embodimentincludes a state in which things are indirectly interconnected throughthe intervention of something, such as a transistor or a resistor,therebetween.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

Furthermore, various embodiments can be implemented as described below.For example, the memory cell transistor MT is able to store 2-bit(four-valued) data, and, when threshold voltage levels used to store anyone of four values are defined as level E (erase level), level A, levelB, and level C in the order of lowest to highest,

(1) in a read operation,

a voltage which is applied to a word line selected for the readoperation of level A is, for example, between 0 V and 0.55 V inclusive.The voltage is not limited to this range, but can be between 0.1 V and0.24 V inclusive, between 0.21 V and 0.31 V inclusive, between 0.31 Vand 0.4 V inclusive, between 0.4 V and 0.5 V inclusive, or between 0.5 Vand 0.55 V inclusive.

A voltage which is applied to a word line selected for the readoperation of level B is, for example, between 1.5 V and 2.3 V inclusive.The voltage is not limited to this range, but can be between 1.65 V and1.8 V inclusive, between 1.8 V and 1.95 V inclusive, between 1.95 V and2.1 V inclusive, or between 2.1 V and 2.3 V inclusive.

A voltage which is applied to a word line selected for the readoperation of level C is, for example, between 3.0 V and 4.0 V inclusive.The voltage is not limited to this range, but can be between 3.0 V and3.2 V inclusive, between 3.2 V and 3.4 V inclusive, between 3.4 V and3.5 V inclusive, between 3.5 V and 3.6 V inclusive, or between 3.6 V and4.0 V inclusive.

The time of the read operation (tR) can be, for example, between 25 μsand 38 μs inclusive, between 38 μs and 70 μs inclusive, or between 70 μsand 80 μs inclusive.

(2) The write operation includes a program operation and a verificationoperation as mentioned above. In the write operation,

a voltage which is first applied to a word line selected for the programoperation is, for example, between 13.7 V and 14.3 V inclusive. Thevoltage is not limited to this range, but can be, for example, between13.7 V and 14.0 V inclusive or between 14.0 V and 14.6 V inclusive.

A voltage which is applied to a word line selected for writing to anodd-numbered word line and a voltage which is applied to a word lineselected for writing to an even-numbered word line can be made differentfrom each other.

When the program operation is assumed to employ an incremental steppulse program (ISPP) system, examples of a step-up voltage include about0.5 V.

A voltage which is applied to a non-selected word line can be, forexample, between 6.0 V and 7.3 V inclusive. The voltage is not limitedto this range, but can be, for example, between 7.3 V and 8.4 Vinclusive, or can be equal to or lower than 6.0 V.

A pass voltage to be applied can be changed depending on whether thenon-selected word line is an odd-numbered word line or an even-numberedword line.

The time of the write operation (tProg) can be, for example, between1700 μs and 1800 μs inclusive, between 1800 μs and 1900 μs inclusive, orbetween 1900 μs and 2000 μs inclusive.

(3) In an erase operation, a voltage which is first applied to a wellformed on an upper portion of a semiconductor substrate and having thememory cells arranged above can be, for example, between 12 V and 13.6 Vinclusive. The voltage is not limited to this range, but can be, forexample, between 13.6 V and 14.8 V inclusive, between 14.8 V and 19.0 Vinclusive, between 19.0 V and 19.8 V inclusive, or between 19.8 V and 21V inclusive.

The time of the erase operation (tErase) can be, for example, between3000 μs and 4000 μs inclusive, between 4000 μs and 5000 μs inclusive, orbetween 4000 μs and 9000 μs inclusive.

(4) The structure of the memory cells has a charge storage layerarranged on a semiconductor substrate (a silicon substrate) via a tunnelinsulating film with a film thickness of 4 nm to 10 nm. The chargestorage layer can have a stacked structure configured with an insulatingfilm with a film thickness of 2 nm to 3 nm made from, for example, SiNor SiON and polysilicon with a film thickness of 3 nm to 8 nm. Moreover,a metal such as Ru can be added to polysilicon. An insulating film isprovided on the charge storage layer. The insulating film includes, forexample, a silicon oxide film with a film thickness of 4 nm to 10 nmsandwiched between a lower-layer High-k film with a film thickness of 3nm to 10 nm and an upper-layer High-k film with a film thickness of 3 nmto 10 nm. Examples of the High-k film include HfO. Furthermore, the filmthickness of the silicon oxide film can be made greater than the filmthickness of the High-k film. A control electrode with a film thicknessof 30 nm to 70 nm is formed on the insulating film via a material with afilm thickness of 3 nm to 10 nm. In this example, this material is ametal oxide film such as TaO or a metal nitride film such as TaN. Thecontrol electrode can be made from, for example, W (tungsten).

Moreover, an air gap can be formed between the memory cells.

What is claimed is:
 1. A semiconductor memory device comprising: a firstmemory string including first and second select transistors and firstand second memory cell transistors connected between the first andsecond select transistors; a second memory string including third andfourth select transistors and third and fourth memory cell transistorsconnected between the third and fourth select transistors; a first wordline connected to gates of the first and third memory cell transistors;a second word line connected to gates of the second and fourth memorycell transistors; first to fourth selection gate lines respectivelyconnected to gates of the first to fourth select transistors; a bit lineconnected to the first and third select transistors; and a source lineconnected to the second and fourth select transistors, wherein, during aread operation performed on the first memory cell transistor, the secondword line is boosted from a first voltage to a second voltage at aconstant rate over a first time interval starting at a first point intime, the first and second selection gate lines are boosted from thefirst voltage to a third voltage, which is lower than the secondvoltage, at a constant rate over a second time interval, which isshorter than the first time interval, starting at the first point intime, the first word line is boosted from the first voltage to a fourthvoltage, which is lower than the third voltage, at a constant rate overa third time interval, which is shorter than the second time interval,starting at the first point in time, and then a fifth voltage lower thanthe fourth voltage is applied to the first word line, the third andfourth selection gate lines are boosted from the first voltage to thefourth voltage at a constant rate over the third time interval startingat the first point in time, and then the first voltage is applied to thethird and fourth selection gate lines, and the bit line and the sourceline are maintained at a sixth voltage, which is lower than the fifthvoltage, during the third time interval, and then, after the end of thethird time interval, the bit line and the source line are boosted fromthe sixth voltage to a seventh voltage.
 2. The semiconductor memorydevice according to claim 1, wherein the rate of boosting the voltagesof the second word line, the first and second selection gate lines, thefirst word line, and the third and fourth selection gate lines, is thesame.
 3. The semiconductor memory device according to claim 1, whereinthe first voltage is applied to the third and fourth selection gatelines at the end of the third time interval.
 4. The semiconductor memorydevice according to claim 1, wherein the fifth voltage is applied to thefirst word line at the end of the first time interval.
 5. Thesemiconductor memory device according to claim 4, wherein an eighthvoltage lower than the fifth voltage is applied to the first word linebetween the end of the third time interval and the end of the first timeinterval.
 6. The semiconductor memory device according to claim 5,wherein a ninth voltage higher than the eighth voltage is applied to thebit line after the eighth voltage is applied to the first word line, anddata stored in the first memory cell transistor is read out according toa current flowing from the bit line to the source line.
 7. Thesemiconductor memory device according to claim 6, wherein at the timethe ninth voltage is applied to the bit line, the second word line isboosted to a voltage higher than the second voltage.
 8. Thesemiconductor memory device according to claim 1, wherein each of thefirst and sixth voltages is a ground voltage.
 9. The semiconductormemory device according to claim 1, wherein the seventh voltage issmaller than a difference between the second voltage and the fourthvoltage.
 10. The semiconductor memory device according to claim 1,wherein the seventh voltage is applied to the bit line and the sourceline after the third and fourth select transistors are turned off. 11.In a semiconductor memory device having a first memory string includingfirst and second select transistors and first and second memory celltransistors connected between the first and second select transistors, asecond memory string including third and fourth select transistors andthird and fourth memory cell transistors connected between the third andfourth select transistors, a first word line connected to gates of thefirst and third memory cell transistors, a second word line connected togates of the second and fourth memory cell transistors, first to fourthselection gate lines respectively connected to gates of the first tofourth select transistors, a bit line connected to the first and thirdselect transistors, and a source line connected to the second and fourthselect transistors, a method of performing a read operation on the firstmemory cell transistor, said method comprising: boosting the second wordline from a first voltage to a second voltage at a constant rate over afirst time interval starting at a first point in time; boosting thefirst and second selection gate lines from the first voltage to a thirdvoltage, which is lower than the second voltage, at a constant rate overa second time interval, which is shorter than the first time interval,starting at the first point in time; boosting the first word line fromthe first voltage to a fourth voltage, which is lower than the thirdvoltage, at a constant rate over a third time interval, which is shorterthan the second time interval, starting at the first point in time, andthen applying a fifth voltage lower than the fourth voltage to the firstword line; boosting the third and fourth selection gate lines from thefirst voltage to the fourth voltage at a constant rate over the thirdtime interval starting at the first point in time, and then applying thefirst voltage to the third and fourth selection gate lines; andmaintaining the bit line and the source line at a sixth voltage, whichis lower than the fifth voltage, during the third time interval, andthen, after the end of the third time interval, boosting the bit lineand the source line from the sixth voltage to a seventh voltage.
 12. Themethod according to claim 11, wherein the rate of boosting the voltagesof the second word line, the first and second selection gate lines, thefirst word line, and the third and fourth selection gate lines, is thesame.
 13. The method according to claim 11, wherein the first voltage isapplied to the third and fourth selection gate lines at the end of thethird time interval.
 14. The method according to claim 11, wherein thefifth voltage is applied to the first word line at the end of the firsttime interval.
 15. The method according to claim 14, further comprising:applying an eighth voltage lower than the fifth voltage to the firstword line between the end of the third time interval and the end of thefirst time interval.
 16. The method according to claim 15, furthercomprising: applying a ninth voltage higher than the eighth voltage tothe bit line after the eighth voltage is applied to the first word line;and while the ninth voltage is applied to the bit line, reading out datastored in the first memory cell transistor according to a currentflowing from the bit line to the source line.
 17. The method accordingto claim 16, further comprising: at the time the ninth voltage isapplied to the bit line, boosting the second word line to a voltagehigher than the second voltage.
 18. The method according to claim 11,wherein each of the first and sixth voltages is a ground voltage. 19.The method according to claim 11, wherein the seventh voltage is smallerthan a difference between the second voltage and the fourth voltage. 20.The method according to claim 11, wherein the seventh voltage is appliedto the bit line and the source line after the third and fourth selecttransistors are turned off.